STN4526 Datasheet, PDF(1/6 Page) Stanson Technology – STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN4526 Datasheet, PDF (1/6 Pages) Stanson Technology – STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN4526

N Channel Enhancement Mode MOSFET

10.0A

DESCRIPTION

STN4526 is the N-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

PIN CONFIGURATION

SOP-8

FEATURE

40V/10.0A, RDS(ON) = 25mâ¦ (Typ.)

@VGS = 10V

40V/8.0A, RDS(ON) = 31mâ¦

@VGS = 4.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

PART MARKING

Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number

STN4526

â» Process Code : A ~ Z ; a ~ z

Package

SOP-8P

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Part Marking

STN4526

STN4526 2007. V1

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