STN4488L Datasheet, PDF(1/7 Page) Stanson Technology – STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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STN4488L Datasheet, PDF (1/7 Pages) Stanson Technology – STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

STN4488L

N Channel Enhancement Mode MOSFET

20.0A

DESCRIPTION

STN4488L is the N-Channel logic enhancement mode power field effect transistors

which are produced using high cell density DMOS trench technology. It is suitable for

the power management applications in the portable or battery powered system.

PIN CONFIGURATION

SOP-8

FEATURE

30V/20A, RDS(ON) = 3.8mâ¦ (Typ.)

@VGS = 10V

30V/18A, RDS(ON) = 5.2mâ¦

@VGS = 4.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

PART MARKING

SOP-8

Y:Year Code

A: Week Code

M: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4488L 2009. V1

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