STN442D Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN442D
N Channel Enhancement Mode MOSFET
27.0A
DESCRIPTION
STN442D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
60V/20.0A, R_DS(ON) = 24mΩ (Typ.)
@VGS = 10V
60V/20.0A, R_DS(ON) = 31mΩ
@VGS = 4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN442D 2009. V1