STN4412 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN4412
N Channel Enhancement Mode MOSFET
6.8A
DESCRIPTION
STN4412 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
z 30V/6.8A, R_DS(ON) = 28mΩ
@VGS = 10V
z 30V/5.6A, R_DS(ON) = 36mΩ
@VGS = 4.5V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOP-8 package design
PART MARKING
SOP-8
STN4412
SYA
ORDERING INFORMATION
Part Number
Package
Part Marking
STN4412S8RG
SOP-8P
STN4412
STN4412S8TG
SOP-8P
STN4412
※ Process Code : A ~ Z ; a ~ z
※ STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1