STN4392 Datasheet, PDF(1/7 Page) Stanson Technology – STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN4392 Datasheet, PDF (1/7 Pages) Stanson Technology – STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN4392

N Channel Enhancement Mode MOSFET

13A

DESCRIPTION

STN4392 is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

PIN CONFIGURATION

SOP-8

FEATURE

ï¿½ 30V/13A, RDS(ON) = 8mÎ© (Typ.)

@VGS = 10V

ï¿½ 30V/10A, RDS(ON) = 12mÎ©

@VGS = 4.5V

ï¿½ Super high density cell design for

extremely low RDS(ON)

ï¿½ Exceptional on-resistance and

maximum DC current capability

ï¿½ SOP-8 package design

PART MARKING

SOP-8

STN4392

Yï¼Year Code Aï¼Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4392 2009. V1

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