STN4260 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN4260
N Channel Enhancement Mode MOSFET
18A
DESCRIPTION
STN4260 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density. This high density process is especially
tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as power management and other battery powered circuits
where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
l 60V/10A, R_DS(ON) = 11.5mΩ (Typ.)
@VGS = 10V
l 60V/8A, R_DS(ON) = 12.5mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and
maximum DC current capability
l SOP-8 package design
PART MARKING
Y: Year Code
A: Porduce Code
P: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
STN4260 2016. V1