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| STN4110 Datasheet, PDF (1/8 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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STN4110
N Channel Enhancement Mode MOSFET
40.0A
DESCRIPTION
STN4110 is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
60V/20.0A, RDS(ON) = 10m⦠(Typ.)
@VGS = 10V
60V/20.0A, RDS(ON) = 12mâ¦
@VGS = 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Date Code Q:Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STN4110 2010. V1
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