STN410D Datasheet, PDF (1/8 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN410D
N Channel Enhancement Mode MOSFET
15.0A
DESCRIPTION
STN410D is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The STN410D has
been designed specially to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM controllers. It has been optimized
for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
30V/ 15.0A, R_DS(ON) = 40mΩ
@VGS = 10V
30V/8.0A, R_DS(ON) =50mΩ
@VGS = 4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN410D 2009. V1