STN4102 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN4102
N Channel Enhancement Mode MOSFET
15.0A
DESCRIPTION
STN4102 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STN410D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
FEATURE
TO-252
TO-251
30V/ 15.0A, R_DS(ON) = 32mΩ
@VGS = 10V
30V/8.0A, R_DS(ON) =40mΩ
@VGS = 4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code
A: Week Code
X: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN4102 2009. V1