STN3446 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN3446
N Channel Enhancement Mode MOSFET
5.3A
DESCRIPTION
The STN3446 is the N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6P
FEATURE
◆ 20V/5.3A, RDS(ON)=48mΩ@VGS=4.5V
◆ 20V/3.4A, RDS(ON)=65mΩ@VGS=2.5V
◆ 20V/2.8A, RDS(ON)=90mΩ@VGS=1.8V
◆ Super high density cell design for extremely low
RDS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6P package design
Y: Year Code
W: Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3446 2010. V1