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| STN2610D Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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STN2610D
N Channel Enhancement Mode MOSFET
50.0A
DESCRIPTION
STN2610D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION
TO-252
TO-251
FEATURE
l 60V/10.0A, RDS(ON) = 10mΩ (Typ.)
@VGS = 10V
l 60V/8.0A, RDS(ON) = 12mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and
maximum DC current capability
l TO-252, TO-251 package design
PART MARKING
Yï¼ Year Code
Aï¼Process Code
Bï¼Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN2610D 2009. V1
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