STN210D Datasheet, PDF (1/9 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN210D
N Channel Enhancement Mode MOSFET


DESCRIPTION
80.0A
STN210D uses Trench MOSFET technology that is uniquely optimized to provide the
most efficient nigh frequency switching performance. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)


TO-252


TO-251






















PART MARKING
FEATURE


l 30V/20A, R_DS(ON) = 3mΩ
@VGS = 10V
l 30V/20A, R_DS(ON) = 4mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and
maximum DC current capability
l TO-252,TO-251 package design
YYear Code
ADate Code
BProcess Code


STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST210D 2016 V1