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| STN18T20 Datasheet, PDF (1/4 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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STN18T20
N Channel Enhancement Mode MOSFET
18.0A
DESCRIPTION
STN18T20 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
TO-252
FEATURE
lï¬ 200V/12A, RDS(ON) = 170mΩ(Typ.)
@VGS = 10V
lï¬ Super high density cell design for
extremely low RDS(ON)
lï¬ Exceptional on-resistance and
maximum DC current capability
lï¬ TO-252 package design
PART MARKING
Y: Year Code
A: Date Code
Q: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
STN18T20 2012. V1
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