STN1810 Datasheet, PDF(1/7 Page) Stanson Technology – STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN1810 Datasheet, PDF (1/7 Pages) Stanson Technology – STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN1810

N Channel Enhancement Mode MOSFET

8.0A

DESCRIPTION

STN1810 is the N-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance and provide superior

switching performance. These applications such as notebook computer power

management and other battery powered circuits where high-side switching, low in-

line power loss and resistance to transients are melded.

PIN CONFIGURATION

SOP-8

FEATURE

60V/8.0A, RDS(ON) = 140mâ¦ (Typ.)

@VGS = 10V

60V/6.5.0A, RDS(ON) = 150mâ¦

@VGS = 7.0V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

PART MARKING

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN1810 2009. V1

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