STN1304 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

STN1304
N Channel Enhancement Mode MOSFET
2.0A
DESCRIPTION
STN1304 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density process
is especially tailored to minimize on-state resistance.These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-323
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-323
FEATURE
20V/2.0A, R_DS(ON) = 225mΩ
@VGS = 4.5V
20V/1.5A, R_DS(ON) = 315mΩ
@VGS = 2.5V
20V/1.0A, R_DS(ON) = 425mΩ
@VGS = 4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-323 package design
3
04YA
1
2
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STN1304 2005. V1