STN1012 Datasheet, PDF(1/6 Page) Stanson Technology – Dual N Channel Enhancement Mode MOSFET

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STN1012 Datasheet, PDF (1/6 Pages) Stanson Technology – Dual N Channel Enhancement Mode MOSFET

STN1012

Dual N Channel Enhancement Mode MOSFET

0.65A

DESCRIPTION

STN1012 is the N-Channel enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process is

especially tailored to minimize on-state resistance and provide superior switching

performance. These devices are particularly suited for low voltage applications such as

notebook computer power management and other bettery powered circuits where

high-side switching, low in-line power loss, and resistance to transients are needed.

PIN CONFIGURATION

SOT-523 / SC-89

FEATURE

ï¿½ 20V/0.65A, RDS(ON) =380ohm@VGS =4.5V

ï¿½ 20V/0.55A, RDS(ON) =450ohm@VGS =2.5V

ï¿½ 20V/0.45A, RDS(ON) =800ohm@VGS =1.8V

ï¿½ Super high density cell design for extremely

low RDS(ON)

ï¿½ Exceptional low on-resistance and maximum

DC current capability

ï¿½ SOT-523 / SC89 package design

PART MARKING

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STN1012 2009. V1

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