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| STM5853 Datasheet, PDF (1/7 Pages) Stanson Technology – P Channel Mode MOSFET with Schottky | |||
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STM5853
P Channel Mode MOSFET with Schottky
-3.6A
DESCRIPTION
STM5853 is the P-Channel logic enhancement mode power field effect transistors with
Schottky Diode. The MOSFET is produced using high cell density, DMOS trench
technology. This high density process is especially tailored to minimize on-state
resistance. This device is particularly suited for charging switch for cellular phone and
other battery powered circuits
PIN CONFIGURATION
DFN8
J: Part Marking
X: Year Code
A: Process Code
FEATURE
z -20V/-3.4A, RDS(ON) = 77m-ohm(Typ.)
@VGS = -4.5V
z -20V/-2.4A, RDS(ON) = 98m-ohm
@VGS = -2.5V
z -20V/-1.7A, RDS(ON) = 135m-ohm
@VGS = -1.8V
z 20V/1.0A, Vf =0.46V @ 0.5A
z Super high density cell design for
extremely low RDS(ON)
ORDERING INFORMATION
Part Number
Package
Part Marking
STM5853QF8RG
DFN8
SYA
â» Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
â» STM5853QF8RG QF8 : QFN8; R: Tape Reel ; G: Pb â Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STM5853 2008. V1
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