STC6301D Datasheet, PDF (1/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC6301D
N&P Pair Enhancement Mode MOSFET
23.0A / -18.0A
DESCRIPTION
The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as power management, where high-side switching, low in-line power loss and resistance to transient
are needed.
PIN CONFIGURATION
TO252-4L
D1 / D2
PART MARKING
FEATURE
N-Channel
l 60V/8.0A, RDS(ON) = 37mR
@VGS = 10V
l 60V/5.0A, RDS(ON) = 28mΩ
@VGS = 4.5V
P-Channel
l -60V/-5.0A, RDS(ON) = 46mΩ
@VGS = -10V
l -60V/-3.0A, RDS(ON)= 65mΩ
@VGS = - 4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and maximum
DC current capability
l TO252-4L package
Y ∶Year
A ∶Date code
B/C：Process Code
X ：Package Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6301D 2017. V1