ST9402 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST9402
N Channel Enhancement Mode MOSFET
3.6A
DESCRIPTION
ST9402 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density
process is especially tailored to minimize on-state resistance.These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
z 20V/3.6A, R_DS(ON) = 76mΩ
@VGS = 4.5V
z 20V/3.1A, R_DS(ON) = 90 mΩ
@VGS = 2.5V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
S02YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST9402SRG
SOT-23
※ Process Code : A ~ Z ; a ~ z
※ ST9402SRG S : SOT23 ; R : Tape Reel ; G : Pb – Free
S02YA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST9402 2005. V1