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| ST75N75 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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ST75N75
N Channel Enhancement Mode MOSFET
75.0A
DESCRIPTION
ST75N75 is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION
TO220-3L
FEATURE
75V/40.0A, RDS(ON) = 8m⦠(Typ.)
@VGS = 10V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-220 package design
MARKING
PIN CONFI
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST75N75 2011. V1
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