ST7400 Datasheet, PDF (1/8 Pages) Stanson Technology – ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST7400
N Channel Enhancement Mode MOSFET
2.8A
DESCRIPTION
ST7400 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-323 (SC-70)
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-323
FEATURE
30V/2.8A, R_DS(ON) = 77mΩ
@VGS =10V
30V/2.5A, R_DS(ON) = 85mΩ
@VGS = 4.5V
30V/1.5A, R_DS(ON) = 170mΩ
@VGS = 2.5V
Super high density cell design for
Extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-323 (SC-70) package design
3
00YW
1
2
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST7400 2005. V1