ST47P06D Datasheet, PDF (1/8 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

ST47P06D
P Channel Enhancement Mode MOSFET
-47.0A
DESCRIPTION
ST47P06D is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These device is particularly suited for low voltage application, notebook computer
power management and other battery circuits where high-side switching.
PIN CONFIGURATION
FEATURE
-60V/-24A, R_DS(ON) = 22mΩ (Typ.)
@VGS = -10V
-60V/-10A, R_DS(ON) = 30mΩ
@VGS = -4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-220 package design
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150 )
Pulsed Drain Current
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
TA=25
TA=80
TA=25
Symb
ol
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
Typical
-60
±20
-47.0
-33.0
-180
160
-55/150
-55/150
Thermal Resistance-Junction to Ambient
RθJA
62
Unit
V
V
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST47P06D 2010. V1