ST36N10D Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST36N10D
N Channel Enhancement Mode MOSFET
36.0A
DESCRIPTION
STN36N10D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
100V/20.0A, R_DS(ON) = 40mΩ (Typ.)
@VGS = 10V
100V/20.0A, R_DS(ON) = 42mΩ
@VGS = 4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code
A: Week Code
Q: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST36N10D 2009. V1