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| ST3426 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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ST3426
N Channel Enhancement Mode MOSFET
3.0A
DESCRIPTION
The ST3426 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
lï¬ 60V/3.0A, RDS(ON) = 90mΩ
@VGS = 10V
lï¬ 60V/2.0A, RDS(ON) = 110mΩ
@VGS = 4.5V
lï¬ Super high density cell design for
extremely low RDS(ON)
lï¬ Exceptional on-resistance and maximum
DC current capability
lï¬ SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
Y: Year Code A: Process Code
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3426 2014. V1
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