ST3414A Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST3414A
N Channel Enhancement Mode MOSFET
3.0A
DESCRIPTION
ST3414A is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density process
is especially tailored to minimize on-state resistance.These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
FEATURE
20V/4.2A, R_DS(ON) = 45mΩ ( Typ.)
@VGS = 4.5V
20V/3.4A, R_DS(ON) = 60 mΩ
@VGS = 2.5V
20V/2.8A, R_DS(ON) = 80 mΩ
@VGS = 1.8V
Super high density cell design for extremely
low R_DS(ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23package design
3
14YA
1
2
Y: Year Code A: Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1