ST3406SRG Datasheet, PDF(1/6 Page) Stanson Technology – ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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ST3406SRG Datasheet, PDF (1/6 Pages) Stanson Technology – ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST3406SRG

N Channel Enhancement Mode MOSFET

5.4A

DESCRIPTION

ST3406SRG is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23

FEATURE

30V/5.4A, RDS(ON) = 26mâ¦(Typ.)

@VGS = 10V

30V/4.6A, RDS(ON) = 38mâ¦

@VGS = 4.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

A6YA

Y: Year Code A: Week Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

ST3406SRG 2006. V1

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