ST3406 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST3406
N Channel Enhancement Mode MOSFET
5.4A
DESCRIPTION
ST3406 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
FEATURE
z 30V/5.4A, R_DS(ON) = 26mΩ(Typ.)
@VGS = 10V
z 30V/4.6A, R_DS(ON) = 36mΩ
@VGS = 4.5V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
A6YA
1
2
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3406S23RG
SOT-23-3L
A6YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1