ST3402 Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST3402
N Channel Enhancement Mode MOSFET
4A
DESCRIPTION
ST3402 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
z 30V/2.8A, R_DS(ON) = 58mΩ
@VGS = 10V
z 30V/2.3A, R_DS(ON) = 65mΩ
@VGS = 4.5V
z 30V/1.5A, R_DS(ON) = 105mΩ
@VGS = 2.5V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
3
A2YA
1
2
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3402S23RG
SOT-23-3L
A2YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3402S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3402 2006. V1