ST3401M23RG Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

ST3401M23RG
P Channel Enhancement Mode MOSFET
-4.0A
DESCRIPTION
ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
-30V/-4.0A, R_DS(ON) = 53mΩ (Typ.)
@VGS = -10V
-30V/-3.2A, R_DS(ON) = 60mΩ
@VGS = -4.5V
Super high density cell design for
Extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23-3L package design
PART MARKING
SOT-23-3L
3
A1YA
1
2
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401M23RG 2005. V1