ST3401 Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

ST3401
P Channel Enhancement Mode MOSFET
-4.0A
DESCRIPTION
ST3401 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
z -30V/-4.0A, R_DS(ON) = 45mΩ (Typ.)
@VGS = -10V
z -30V/-3.2A, R_DS(ON) = 50mΩ
@VGS = -4.5V
z -30V/-1.2A, R_DS(ON) = 60mΩ
@VGS = -2.5V
z Super high density cell design for
Extremely low R_DS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOT-23-3L package design
3
A1YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3401S23RG
SOT-23-3L
A1YA
※ Process Code : A ~ Z ; a ~ z
※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401 2005. V1