ST3400SRG Datasheet, PDF(1/6 Page) Stanson Technology – The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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ST3400SRG Datasheet, PDF (1/6 Pages) Stanson Technology – The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

ST3400SRG

N Channel Enhancement Mode MOSFET

5.8A

DESCRIPTION

The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor

is produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance. These

devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other battery powered circuits where high

side switching.

PIN CONFIGURATION

SOT-23

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

FEATURE

30V/5.8A, RDS(ON) = 25mâ¦ (Typ.)

@VGS = 10V

30V/4.8A, RDS(ON) = 30mâ¦

@VGS = 4.5V

30V/4.0A, RDS(ON) = 40mâ¦

@VGS = 2.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

A0YA

Y: Year Code A: Week Code

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stnasontech.com

STN3400SRG 2009. V1

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