ST2341 Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

ST2341
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST2341 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
FEATURE
z -20V/-3.3A, R_DS(ON) = 36m-ohm (Typ.)
@VGS = -10V
z -20V/-2.8A, R_DS(ON) = 45m-ohm
@VGS = -4.5V
z -20V/-2.3A, R_DS(ON) = 55m-ohm
@VGS = -1.8V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
PART MARKING
SOT-23-3L
3
41YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2341S23RG
SOT-23-3L
41YA
※ Process Code : A ~ Z ; a ~ z
※ ST2341S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341 2006. Rev.1