ST2318SRG Datasheet, PDF(1/7 Page) Stanson Technology – ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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ST2318SRG Datasheet, PDF (1/7 Pages) Stanson Technology – ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

ST2318SRG

N Channel Enhancement Mode MOSFET

3.9A

DESCRIPTION

ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is

produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application such as cellular phone and notebook computer

power management, other battery powered circuits, and low in-line power loss are

needed in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

18YW

Y: Year Code W: Week Code

FEATURE

40V/3.9A, RDS(ON) = 42mâ¦ (Typ.)

@VGS = 10V

40V/3.5A, RDS(ON) = 53mâ¦

@VGS = 4.5V

40V/2.0A, RDS(ON) = 75 mâ¦

@VGS = 2.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2318SRG 2009. V1

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