ST2317S23RG Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

ST2317S23RG
P Channel Enhancement Mode MOSFET
-5.0A
DESCRIPTION
ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side
switching and low in-line power loss are required in a very small outline surface
mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
17YW
1
2
Y: Year Code W: Week Code
FEATURE
l -40V/-5.0A, R_DS(ON) = 37mΩ (Typ.)
@VGS = -10V
l -40V/-3.0A, R_DS(ON) = 51mΩ
@VGS = -4.5V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOT-23 package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2317S23RG 2016 Rev.1