ST2306 Datasheet, PDF (1/8 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

N Channel Enhancement Mode MOSFET
3.5A
ST2306
DESCRIPTION
The ST2306 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L / SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
3
06YA
FEATURE
30V/3.5A, R_DS(ON) = 70m-ohm
@VGS = 10V
30V/2.8A, R_DS(ON) = 95m-ohm
@VGS = 5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L /SOT-23 package design
1
2
S: Subcontractor Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]
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