ST2301 Datasheet, PDF (1/6 Pages) Stanson Technology – P Channel Enchancement Mode MOSFET

P Channel Enchancement Mode MOSFET
-2.8A
ST2301
DESCRIPTION
The ST2301 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
3
S01YA
FEATURE
z -20V/-2.8A, R_DS(ON) = 120m-ohm
@VGS = -4.5V
z -20V/-2.0A, R_DS(ON) = 170m-ohm
@VGS = -2.5V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
1
2
S: Subcontractor Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]
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