ST2300 Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST2300
N Channel Enhancement Mode MOSFET
4A
DESCRIPTION
The ST2300 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss
are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
z 20V/6.0A, R_DS(ON) = 22mΩ (Typ.)
@VGS = 10V
z 20V/5.0A, R_DS(ON) = 26mΩ
@VGS = 4.5V
z 20V/4.5A, R_DS(ON) = 29mΩ
@VGS = 2.5V
z 20V/4.0A, R_DS(ON) = 35mΩ
@VGS = 1.8V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and
Maximum DC current capability
z SOT-23-3L package design
3
42YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2300S23RG
SOT-23-3L
※ Process Code : A ~ Z ; a ~ z
※ ST2300S23RG ; S23 : SOT23-3L R : Tape Reel ; G : Pb – Free
42YA
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1