ST18N10D Datasheet, PDF (1/6 Pages) Stanson Technology – TO-252 Package design

ST18N10D
N Channel Enhancement Mode MOSFET
18.0A
DESCRIPTION
ST18N10D is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The ST18N10D
has been designed specially to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
FEATURE
! 100V/12.0A, R_DS(ON) = 90mΩ(Typ.)
@VGS = 10V
! 100V/8.0A, R_DS(ON) = 100mΩ
@VGS = 4.0V
Super high density cell design for
extremely low R_DS(ON)
! Exceptional on-resistance and
maximum DC current capability
! TO-252 Package design
PART MARKING
W: Wafer Code P: Product Code
Y: Year Code A: Produce Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18N10D 2009. V1