ST1413AC Datasheet, PDF (1/7 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

P Channel Enhancement Mode MOSFET ST1413AC
-3.4A
DESCRIPTION
The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone,
notebook computer power management and other battery powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOD-353 (SC-70)
D DS
D
G
1.4.5.Drain 2.Gate 3.Source
FEATURE
z -20V/-3.4A, R_DS(ON) = 130m-ohm
@VGS = -4.5V
z -20V/-2.4A, R_DS(ON) = 150m-ohm
@VGS = -2.5V
z 20V/-1.7A, R_DS(ON) = 190m-ohm
@VGS = -1.8V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOT-353 (SC-70) package design
1AYW
1A : Part Marking
Y : Year Code
W : Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]
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