ST13P10 Datasheet, PDF (1/9 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

ST13P10
P Channel Enhancement Mode MOSFET
-13.0A
DESCRIPTION
ST13P10 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The ST13P10 has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
l -100V/-13.0A, R_DS(ON) = 130mΩ
@VGS = -10V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and maximum
DC current capability
l TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
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Copyright © 2009, Stanson Corp.
ST13P10 2009. V1