ST12N10D Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST12N10D
N Channel Enhancement Mode MOSFET
12.0A
DESCRIPTION
ST12N10D is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The ST12N10D
has been designed specially to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
FEATURE
100V/12.0A, R_DS(ON) = 170mΩ(Typ.)
@VGS = 10V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252 Package design
PART MARKING
Y: Year Code
A: Produce Code
O: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST12N10D 2009. V1