ST10E4 Datasheet, PDF (1/7 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

ST10E4
N Channel Enhancement Mode MOSFET
3.0A
DESCRIPTION
The ST10E4 is the N-Channel logic enhancement mode power field effect transistor is
produce using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
device are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
FEATURE
100V/3.0A, RDS(ON) = 160mΩ
@VGS = 10V
100V/2.5A, RDS(ON) = 180mΩ
@VGS = 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
E4YA
1
2
Y: Year Code A: Praduce Code
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
ST10E4 2013 . V1