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| ST1004SRG Datasheet, PDF (1/6 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET | |||
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ST1004SRG
N Channel Enhancement Mode MOSFET
2.0A
DESCRIPTION
ST1004SRG is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The process is
especially to improve the overall efficiency of DC/DC conventional switching PWM
controllers. It has been optimized for low gate charge, low RDS(on) and fast switching
speed.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
100V/1.0A, RDS(ON) = 310mâ¦
@VGS = 10V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
104YA
1
2
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST1004SRG 2013. V1
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