ST05N20 Datasheet, PDF (1/6 Pages) Stanson Technology – SOT-223 package design

ST05N20
N Channel Enhancement Mode MOSFET
2.0A
DESCRIPTION
ST05N20 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOT-223
FEATURE
l 200V/2.0A, R_DS(ON) = 800m
@VGS = 10V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and
maximum DC current capability
l SOT-223 package design
0520 : Product Code
A : Date Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
ST05N20 2014. V1