ST04N20D Datasheet, PDF (1/7 Pages) Stanson Technology – TO-252 package design

ST04N20D
N Channel Enhancement Mode MOSFET
4.0A
DESCRIPTION
ST04N20D is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
TO-252
FEATURE
l 200V/4.0A, R_DS(ON) = 400m
@VGS = 10V
l Super high density cell design for
extremely low R_DS(ON)
l Exceptional on-resistance and
maximum DC current capability
l TO-252 package design
PART MARKING
P:Perduce Code W:Wafer Code
Y:Year Code A:Product Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
ST04N20D 2014. V1