M04N60 Datasheet, PDF (1/2 Pages) Stanson Technology – N Channel MOSFET

N Channel MOSFET
4.0A
M04N60
TO-220
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Continuous Drain Current
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
ID
V(BR)DSS
IDSS
MIN
600
Gate-Source Leakage Current-Forward
Gate-Source Leakage Current-Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
IGSSF
IGSSR
VGS(th)
2.0
RDS(on)
gFS
2.5
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Internal Drain Inductance
LS
Total Power Dispation
Thermal Resistance – Junction to Case
Operating and Storage Temperature
PD
θ_JC
TJ, TSTG
-55
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VSD
Forward Turn-On Time
ton
Reverse Recovery Time
trr
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
TYP MAX UNITS
CONDITION
3.6
A
VGS =10 V, Ta=25
V
VGS = 0 V, ID = 250 A
0.1
mA
0.5
100
nA
100
nA
4.0
V
2.2
Ω
S
660
pF
86
pF
19
pF
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125
Vgsf = 20 V, VDS = 0 V
Vgsr = 20 V, VDS = 0 V
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 2.2A *
VDS = 50 V, ID = 2.2A *
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
11
ns
13
ns
VDD = 300 V, ID =3.6 A, VGS = 10 V,
35
ns
RG = 12Ω *
14
ns
31
nC
4.6
nC
17
nC
VDS = 360 V, ID = 3.6 A, VGS = 10 V *
4.5
nH Measured from the drain lead 0.25” from package to
center of die
7.5
nH Measured from the source lead 0.25” from package
to source bond pad
74
W
1.7
/W
150
1.6
V
**
ns
370
ns
IS = 3.6 A, VGS = 0 V, dIS/dt = 100A/µs
STANSON TECHNOLOGY
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