B772 Datasheet, PDF (1/1 Pages) Diode Semiconductor Korea – PNP Silicon Epitaxial Planar Transistor

PNP TRANSISTOR
3.0A
B772
z AF OUTPUT AMPLIFIER
z FOR DC-DC CONVERTER
z FOR CAMERA MOTOR DRIVER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
SYMBOL MIN TYP MAX UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo -30
V
Ic=-1mA
Collector-Base Breakdown Voltage BVcbo -4 0
V
Ic=-5 A
Emitter-Base Breakdown Voltage
BVebo -5
V
Ie=-50 A
Collector-Base Leakage
Icbo
-0.1 uA
Vcb=-10V
Emitter-Base Leakage
Iebo
-0.1 uA
Veb=-5V
Collector-Emitter Saturation Voltage Vce sat
-0.5 V
Ic=-2A, Ib=-0.1A
DC Current Gain
Hfe1 80
390
Vce=-2V,Ic=-0.5A
Collector Current
Ic
-3
A
Peak Collector Current
Icp
-5 A(Pulse)
Current Gain Bandwidth
fT
50
MHz Vcb=-5V, Ic=-0.1A
Output Capacitance
Cob
50 pF Vcb=-10V,Ie=0,f=1MHz
Power Dissipation
Pc
1.25 W
Junction Temperature
Tj
150
Storage Temperature
Tstg -55
150
Classification of Hfe
Rank
Range
R
80-160
O
100-200
Y
170-390
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