8550S Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

PNP TRANSISTOR
-0.5A
8550S
Power Dissipation: 0.625W
Collector Current: -0.5A
Collector-Base Voltage: -45V
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
SYMBOL MIN TYP MAX UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo
V
Ic=-0.1mA
Collector-Base Breakdown Voltage BVcbo -45
V
Ic=-100 A
Emitter-Base Breakdown Voltage
BVebo
V
Ie=-100 A
Collector-Base Leakage
Icbo
-0.1 uA
Vcb=-40V
Collector-Emitter Leakage
Iceo
-0.1 uA
Vce=-20V
Emitter-Base Leakage
Iebo
-0.1 uA
Veb=-5V
Collector-Emitter Saturation Voltage Vce(sat
-0.6 V Ic=-500mA, Ib=-50mA
Base-Emiiter Saturation Voltage
Vbe(sat)
-1.2 V Ic=-500mA, Ib=-50mA
DC Current Gain
Hfe1 85
Hfe2 50
Vce=-1V,Ic=-50mA
Vce=-1V,Ic=-500mA
Collector Current
Ic
-0.5 A
Peak Collector Current
Icp
-8 A(Pulse)
Current Gain Bandwidth
fT
MHz Vcb=-6V, Ic=-20mA
Output Capacitance
Cob
32 pF Vcb=-20V,Ie=0,f=1MHz
Power Dissipation
Pc
0.625 W
Junction Temperature
Tj
150
Storage Temperature
Tstg -55
150
Hfe1 Classification
Rank
Range
B
85-160
C
120-200
D
160-300
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]