8050S Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

NPN TRANSISTOR
0.5A
8050S
Power Dissipation: 0.625W
Collector Current: 0.5A
Collector-Base Voltage:: 45V
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Leakage
Collector-Emitter Leakage
Emitter-Base Leakage
Collector-Emitter Saturation Voltage
Base-Emiiter Saturation Voltage
DC Current Gain
Collector Current
Peak Collector Current
Current Gain Bandwidth
Output Capacitance
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL MIN TYP MAX UNIT
CONDITION
BVceo
V
Ic=0.1mA
BVcbo 45
V
Ic=100 A
BVebo
V
Ie=100 A
Icbo
0.1 uA
Vcb=40V
Iceo
0.1 uA
Vce=20V
Iebo
0.1 uA
Veb=5V
Vce(sat
0.6
V Ic=500mA, Ib=50mA
Vbe(sat)
1.2
V Ic=500mA, Ib=50mA
Hfe1 85
Hfe2 50
Vce=1V,Ic=50mA
Vce=1V,Ic=500mA
Ic
0.5
A
Icp
8 A(Pulse)
fT
MHz Vcb=6V, Ic=20mA
Cob
32 pF Vcb=20V,Ie=0,f=1MHz
Pc
0.625 W
Tj
150
Tstg -55
150
Hfe1 Classification
Rank
Range
B
85-160
C
120-200
D
160-300
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]