2SA1615 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

P TYPE TTANSISTORS
-10A
2SA1615, 1615-Z
The 2SA1615 and 1615-Z are available for the large current control in small due to the
low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
PIN CONFIGURATION
2SA1615
2SA1615-Z
1.Base 2.Collector 3.Emitter
FEATURE
Large current capacity:
Ic(DC): -10A, Ic(pulse) : -15A
High h_FE and low collector saturation voltage :
h_FE = 200 MIN (@Vec = -2V, Ic = -0.5A)
V_CE(sat) -0.25V (@Ic = -4.0A, IB = -0.05A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
*PW 10ms, duty cycle 50%
**Printing board mounted
SYMBOL
VCBO
VCEO
VEBO
Ic (DC)
Ic (pulse)*
IB (DC)
PT (Ta =25 )**
PT (Tc = 25 )
Tj
Tstg
RATINGS
-30
-20
-10
-10
-15
-0.5
1.0
15
150
-55 to +150
UNIT
V
V
V
A
A
A
W
W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
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